Title :
Design of W-band VCOs with high output power for potential application in 77 GHz automotive radar systems
Author :
Li, H. ; Rein, H.-M. ; Suttorp, T.
Author_Institution :
AG Halbleiterbauelemente, Ruhr-Univ., Bochum, Germany
Abstract :
It is demonstrated that SiGe bipolar preproduction technologies are well suited for VCOs in 77 GHz automotive radar systems. Due to the relatively high output power aimed at, the designer has to consider the physical transistor limits carefully. The VCOs need a single supply voltage only and have been fully integrated (including resonant circuit and output buffer) on a single small (1 mm/sup 2/) chip, demonstrating their low-cost potential. First experimental results based on a not fully optimized design showed at a center frequency of about 77 GHz, a tuning range of 4.3 GHz, and a phase noise of -95 dBc/Hz at 1 MHz offset frequency. The total signal power of both outputs is 14.3 dBm. Simulations demonstrate a further potential increase of total output power (for two or four outputs) by about 5 dBm.
Keywords :
Ge-Si alloys; bipolar MIMIC; integrated circuit noise; millimetre wave oscillators; phase noise; road vehicle radar; voltage-controlled oscillators; 77 GHz; SiGe; W-band VCO; automotive radar systems; fully differential circuit; fully optimized design; high output power; low-cost potential; phase noise; physical transistor limits; preproduction bipolar technology; single small chip; single supply voltage; Automotive engineering; Design optimization; Frequency; Germanium silicon alloys; Integrated circuit technology; Power generation; RLC circuits; Radar applications; Silicon germanium; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252408
