Complementary high voltage MOSFETs using a modified standard CMOS process

Author

Pérez, A. ; Jordà, X. ; Godignon, P. ; Vellvehí, M. ; Rebollo, J. ; Millán, J.

Author_Institution

Centre Nacional de Microelectron., Bellaterra, Spain

Volume

2

fYear

2003

fDate

28 Sept.-2 Oct. 2003

Abstract

This paper presents a new high voltage technology for power integrated circuits using standard low cost 2.5 μm CMOS technology and oriented for digital applications, with only one extra processing step. Lateral N- and P-MOSFET transistors have been optimized using 2D simulators attending both specific on-resistance and breakdown voltage. Lateral double diffused n-channel transistors with breakdown voltage of 160V (R_on= 13.5mΩ·cm²) have been achieved. Extended drain P-MOSFET transistors with low on-resistance and breakdown voltage of 36V (R_on=2.0mΩ·cm²) have been also implemented.

Keywords

CMOS digital integrated circuits; power MOSFET; power integrated circuits; semiconductor device breakdown; 160 V; 2.5 micron; 2D simulators; 36 V; breakdown voltage; complementary high voltage MOSFETs; digital applications; extended drain P-MOSFET transistors; modified standard CMOS process; power integrated circuits; specific on-resistance; CMOS process; CMOS technology; Circuit simulation; Costs; Design optimization; Integrated circuit technology; MOSFET circuits; Paper technology; Power integrated circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2003. CAS 2003. International

Print_ISBN

0-7803-7821-0

Type

conf

DOI

10.1109/SMICND.2003.1252431

Filename

1252431