DocumentCode
2392348
Title
Characterization of the thin oxides degradation through Fowler-Nordheim current
Author
Cosmin, P.A. ; Badila, M. ; Dunca, T.
Author_Institution
Catalyst Semicond., Inc., Sunnyvale, CA, USA
Volume
2
fYear
2003
fDate
28 Sept.-2 Oct. 2003
Abstract
The paper makes a survey of tunnel oxide constant-current stress measurement method as a basis to characterize the oxide capability to sustain a large number (>106) positive and negative current pulses operating at high temperature. The time-dependent-dielectric-breakdown (TDDB) method appears to be a complete rapid and accurate oxide characterization if some precautions are taken.
Keywords
insulating thin films; semiconductor device breakdown; semiconductor device measurement; semiconductor storage; Fowler-Nordheim current; negative current pulses; oxide capability; oxide characterization; positive current pulses; thin oxides degradation; time-dependent-dielectric-breakdown method; tunnel oxide constant-current stress measurement method; Breakdown voltage; Capacitors; Charge transfer; Current measurement; Degradation; Dielectric measurements; Nonvolatile memory; Stress measurement; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN
0-7803-7821-0
Type
conf
DOI
10.1109/SMICND.2003.1252436
Filename
1252436
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