CMOS threshold voltage extractor circuits and theirs applications in VLSI designs

Author

Popa, Chris ; Manolescu, A.M.

Author_Institution

Fac. of Electron. & Telecommun., Politehnic Inst. of Bucharest, Romania

Volume

2

fYear

2003

fDate

28 Sept.-2 Oct. 2003

Abstract

Two new threshold voltage extractor circuits,will be presented. In order to achieve a full CMOS compatibility, only MOS transistors working in saturation will be used, resulting very small silicon areas consumption (22μmx15μm and 33μmx23μm, respectively). The quantitative evaluation of the threshold voltage computing error will be made taking into account the second-order effects, which affect the MOS transistor operation. The SPICE simulations confirm the theoretical estimations: a linear decreasing with temperature of the threshold voltage and relatively small values of the temperature coefficients of reference voltages (22ppm/K and 16ppm/K, respectively). The very small supply voltage (1.5V) makes the proposed circuits valuable for low-voltage applications.

Keywords

CMOS integrated circuits; SPICE; VLSI; integrated circuit design; 1.5 V; 15 micron; 22 micron; 23 micron; 33 micron; CMOS threshold voltage extractor circuits; MOS transistor operation; SPICE simulations; VLSI designs; full CMOS compatibility; second-order effects; threshold voltage computing error; CMOS technology; Circuits; Current supplies; MOSFETs; SPICE; Silicon; Temperature dependence; Temperature measurement; Threshold voltage; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2003. CAS 2003. International

Print_ISBN

0-7803-7821-0

Type

conf

DOI

10.1109/SMICND.2003.1252451

Filename

1252451