DocumentCode
2393293
Title
Well tapping methodologies in power-gating design
Author
Shi, Kaijian ; Tester, David
Author_Institution
Cadence Design Syst., Dallas, TX, USA
fYear
2011
fDate
26-28 Sept. 2011
Firstpage
128
Lastpage
131
Abstract
65nm and beyond CMOS designs are commonly implemented with “tapless” library cells which do not provide built-in n-well or substrate taps, improving cell density. This cell efficiency results in additional layout complexity for power-gating designs. Three well tapping methods are described for production power-gating designs considering design schedule, leakage power, chip area and complexity.
Keywords
CMOS integrated circuits; integrated circuit layout; CMOS designs; cell density; cell efficiency; chip area; design schedule; layout complexity; leakage power; power-gating designs; size 65 nm; tapless library cells; well tapping methodologies; Logic gates; Power supplies; Rails; Silicon; Switches; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
SOC Conference (SOCC), 2011 IEEE International
Conference_Location
Taipei
ISSN
2164-1676
Print_ISBN
978-1-4577-1616-4
Electronic_ISBN
2164-1676
Type
conf
DOI
10.1109/SOCC.2011.6085133
Filename
6085133
Link To Document