• DocumentCode
    2393293
  • Title

    Well tapping methodologies in power-gating design

  • Author

    Shi, Kaijian ; Tester, David

  • Author_Institution
    Cadence Design Syst., Dallas, TX, USA
  • fYear
    2011
  • fDate
    26-28 Sept. 2011
  • Firstpage
    128
  • Lastpage
    131
  • Abstract
    65nm and beyond CMOS designs are commonly implemented with “tapless” library cells which do not provide built-in n-well or substrate taps, improving cell density. This cell efficiency results in additional layout complexity for power-gating designs. Three well tapping methods are described for production power-gating designs considering design schedule, leakage power, chip area and complexity.
  • Keywords
    CMOS integrated circuits; integrated circuit layout; CMOS designs; cell density; cell efficiency; chip area; design schedule; layout complexity; leakage power; power-gating designs; size 65 nm; tapless library cells; well tapping methodologies; Logic gates; Power supplies; Rails; Silicon; Switches; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOC Conference (SOCC), 2011 IEEE International
  • Conference_Location
    Taipei
  • ISSN
    2164-1676
  • Print_ISBN
    978-1-4577-1616-4
  • Electronic_ISBN
    2164-1676
  • Type

    conf

  • DOI
    10.1109/SOCC.2011.6085133
  • Filename
    6085133