DocumentCode
2393394
Title
Implementation of high-k gate dielectrics - a status update
Author
De Gendt, Stefan ; Chen, J. ; Carter, R. ; Cartier, E. ; Caymax, M. ; Claes, M. ; Conard, T. ; Delabie, A. ; Deweerd, W. ; Kaushik, V. ; Kerber ; Kubicek, S. ; Maes, J.W. ; Niwa, M. ; Pantisano, L. ; Puurunen, R. ; Ragnarsson, L. ; Schram, T. ; Shimamoto,
Author_Institution
IMEC, Leuven, Belgium
fYear
2003
fDate
6-7 Nov. 2003
Firstpage
10
Lastpage
14
Abstract
The authors discuss Hf-Al mixed oxide characteristics, and applications to MOS capacitors and transistors. XRD an TEM analyses are performed and crystallisation behaviour analysed.
Keywords
MOS capacitors; MOSFET; crystallisation; dielectric materials; hafnium compounds; transmission electron microscopy; Hf-Al mixed oxides; HfAlO; MOS capacitors; MOS transistors; TEM; crystallisation; gate dielectrics; Amorphous materials; Annealing; Artificial intelligence; Capacitance measurement; Crystallization; Dielectrics and electrical insulation; Electrodes; High K dielectric materials; High-K gate dielectrics; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location
Toyko, Japan
Print_ISBN
4-89114-037-2
Type
conf
DOI
10.1109/IWGI.2003.159172
Filename
1252497
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