• DocumentCode
    2393544
  • Title

    Charge state dependent point defect in high-k dielectric HfO2

  • Author

    Shiraishi, Kenji ; Saito, Mineo ; Ohno, Takahka

  • Author_Institution
    Inst. of Phys., Tsukuba Univ., Japan
  • fYear
    2003
  • fDate
    6-7 Nov. 2003
  • Firstpage
    38
  • Lastpage
    39
  • Abstract
    In this paper, we have investigated the basic properties of O vacancies in HfO/sub 2/ by the first principle calculations. We have calculated the charge state dependent properties of an O vacancy in cubic-HfO/sub 2/.
  • Keywords
    ab initio calculations; dielectric materials; hafnium compounds; vacancies (crystal); HfO/sub 2/; O vacancies; charge state dependent point defect; first principle calculations; high-k dielectric HfO/sub 2/; Chemicals; Electrons; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Materials reliability; Materials science and technology; Photonic band gap; Physics; Stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
  • Conference_Location
    Toyko, Japan
  • Print_ISBN
    4-89114-037-2
  • Type

    conf

  • DOI
    10.1109/IWGI.2003.159178
  • Filename
    1252503
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2393544