Title :
Improvement in the uniformity and the thermal stability of Hf-silicate gate dielectric by plasma-nitridation
Author :
Kamiyama, Satoshi ; Aoyama, Tomonori ; Tsutsumi, Yoshitugu ; Takada, Hitoshi ; Horiuchi, Atsushi ; Maeda, Takeshi ; Torii, Kazuyoshi ; Kitajima, Hiroshi ; Arikado, Tsunetoshi
Author_Institution :
Res. Dept. I, Semicond. Leading Edge Technol. Inc., Tsukuba, Japan
Abstract :
In this study, we used HfSiO/sub x/ with Hf concentration of 60% in order to obtain a EOT less than 1.5nm, and the influence of nitrogen concentration on the electrical properties was examined.
Keywords :
MOSFET; carrier mobility; dielectric materials; dielectric thin films; hafnium compounds; leakage currents; nitridation; thermal stability; Hf concentration; Hf-silicate gate dielectric; HfSiO/sub x/; electrical properties; nitrogen concentration; plasma-nitridation; thermal stability; Crystallization; Dielectrics; Hafnium; Nitrogen; Plasma materials processing; Plasma properties; Plasma stability; Plasma temperature; Rapid thermal annealing; Thermal stability;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159180
