DocumentCode
2393598
Title
Gate dielectrics on strained-Ge layers on Si/sub 1-x/Gex/Si virtual substrates
Author
Bhattacharya, Surya ; McCarthy, John ; Armstrong, B.M. ; Gamble, H.S. ; Dalapati, G.K. ; Das, S. ; Maiti, C.K. ; Perova, T. ; Moore, A.
Author_Institution
Sch. of Electr. & Electron. Eng., Queen´´s Univ., Belfast, UK
fYear
2003
fDate
6-7 Nov. 2003
Firstpage
48
Lastpage
49
Abstract
We report the deposition and physical characterization of Ge-rich layers on relaxed SiGe/Si using virtual substrate technology by low pressure chemical vapour deposition and formation of different gate dielectrics. Gate dielectrics such as GeO/sub 2/, GeO/sub x/N/sub y/ and high-k ZrO/sub 2/ have been grown using plasma enhanced chemical vapour deposition at 150/spl deg/C. MOS capacitors used in this study were fabricated directly on the Ge substrate and also the electrical characteristics were studied.
Keywords
MOS capacitors; current density; dielectric materials; dielectric thin films; elemental semiconductors; germanium; germanium compounds; leakage currents; permittivity; plasma CVD; zirconium compounds; 150 degC; Ge; Ge layers; Ge substrate; GeO/sub 2/; GeO/sub x/N/sub y/; MOS capacitors; Si/sub 1-x/Ge/sub x/-Si; Si/sub 1-x/Ge/sub x/-Si virtual substrates; ZrO/sub 2/; chemical vapour deposition; electrical properties; gate dielectrics; plasma enhanced chemical vapour deposition; Chemical technology; Chemical vapor deposition; Dielectric substrates; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; MOS capacitors; Plasma chemistry; Plasma properties; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location
Toyko, Japan
Print_ISBN
4-89114-037-2
Type
conf
DOI
10.1109/IWGI.2003.159181
Filename
1252506
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