Title :
Properties of tantalum silicate thin films prepared by metalorganic decomposition
Author :
Salam, K.M.A. ; Saito, Hiroaki ; Fukuda, Hisashi
Author_Institution :
Dept. of Electr. & Electron. Eng., Muroran Inst. of Technol., Hokkaido, Japan
Abstract :
The aim of this paper is to study the properties of the Ta/sub 2/O/sub 5/-SiO/sub 2/ thin films grown by MOD followed by rapid thermal annealing . The film is characterised by XRD, AFM and its electrical properties are studied.
Keywords :
Raman spectra; X-ray diffraction; atomic force microscopy; dielectric losses; dielectric materials; dielectric thin films; liquid phase deposition; permittivity; silicon compounds; surface morphology; tantalum compounds; AFM; Si; Ta/sub 2/O/sub 5/-SiO/sub 2/; Ta/sub 2/O/sub 5/-SiO/sub 2/ thin films; XRD; electrical properties; metalorganic decomposition; rapid thermal process; tantalum silicate thin films; Dielectric loss measurement; Dielectric substrates; Dielectric thin films; Dielectrics and electrical insulation; High K dielectric materials; High-K gate dielectrics; Silicon; Spectroscopy; Temperature; Transistors;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159194
