Separate and independent control of interfacial band alignments and dielectric constants in complex rare-earth/transition metal (Re/Tm) oxides

Author

Lucovsky, G. ; Zhang, Yu ; Whitten, J.L. ; Scholm, D.G. ; Freeouf, J.L.

Author_Institution

Dept. of Phys., North Carolina State Univ., Raleigh, NC, USA

fYear

2003

fDate

6-7 Nov. 2003

Firstpage

112

Lastpage

118

Abstract

This paper introduced a new class of complex rare earth/transition metal oxides in which the energies of the lowest conduction band states can be controlled through bonding of the constituent Re and Tm atoms to a common oxygen atom. The electronic structure of GdScO/sub 3/, the electronic band edge structure of Sc/sub 2/O/sub 3/, and an ab initio theory were studied.

Keywords

ab initio calculations; conduction bands; dielectric materials; gadolinium compounds; hafnium compounds; permittivity; scandium compounds; zirconium compounds; GdScO/sub 3/; HfO/sub 2/; Sc/sub 2/O/sub 3/; ZrO/sub 2/; ab initio calculations; complex rare-earth-transition metal oxides; conduction band states; dielectric constants; electronic band edge structure; electronic structure; interfacial band alignments; oxygen atom; Bonding; Capacitive sensors; Chemistry; Dielectric constant; Dielectric devices; Dielectric thin films; Electrodes; High-K gate dielectrics; Silicon alloys; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on

Conference_Location

Toyko, Japan

Print_ISBN

4-89114-037-2

Type

conf

DOI

10.1109/IWGI.2003.159196

Filename

1252521