Title :
Improvement in thermal stability of the interfacial layer for poly Si/HfAlOx gate stacks
Author :
Mitsuhashi, Riichirou ; Horiuchi, Atsushi ; Uedono, Akira ; Torii, Kentaro
Author_Institution :
Semicond. Leading Edge Technol., Tsukuba, Japan
Abstract :
In this paper we investigate the influence of O/sub 2/ partial pressure on the IL thickness during post high-k deposition annealing. The effect of high temperature annealing after IL formation on the oxidation resistance of the IL is also reported.
Keywords :
MOSFET; annealing; elemental semiconductors; hafnium compounds; high-temperature effects; interface structure; oxidation; silicon; thermal stability; thin films; Si-HfAlO/sub x/; annealing; gate stacks; high-temperature effects; interfacial layer; oxidation resistance; thermal stability; CMOS process; Capacitors; High K dielectric materials; High-K gate dielectrics; Lead compounds; Leakage current; Oxidation; Rapid thermal annealing; Temperature; Thermal stability;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159203
