DocumentCode
2394095
Title
EOT scaling and device issues for high-k gate dielectrics
Author
Gardner, Mark I. ; Gopalan, Sundar ; Gutt, Jim ; Peterson, Jeff ; Li, Hong-Jyh ; Huff, Howard R.
Author_Institution
Int. SEMATECH, Austin, TX, USA
fYear
2003
fDate
6-7 Nov. 2003
Firstpage
170
Lastpage
173
Abstract
In this paper, we fabricate a high-k transistor for equivalent oxide thickness (EOT) scaling involving ALD and MOCVD.
Keywords
MOCVD; MOSFET; atomic layer deposition; dielectric materials; dielectric thin films; hafnium compounds; silicon compounds; HfAl/sub 2/O/sub 4/; HfO/sub 2/; HfSi/sub x/O/sub y/; MOCVD; SiO/sub 2/; atomic layer deposition; equivalent oxide thickness scaling; high-k gate dielectrics; high-k transistor; Dielectric substrates; Electrodes; Equations; Fabrication; High K dielectric materials; High-K gate dielectrics; MOCVD; Tin; Transistors; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location
Toyko, Japan
Print_ISBN
4-89114-037-2
Type
conf
DOI
10.1109/IWGI.2003.159206
Filename
1252531
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