• DocumentCode
    2394460
  • Title

    La2O3/Si0.3Ge0.7 p-MOSFETs and Ni germano-silicide

  • Author

    Huang, C.H. ; Lin, C.Y. ; Li, H.Y. ; Chen, W.J. ; Chin, Albert ; Mei, P.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2003
  • fDate
    6-8 Oct. 2003
  • Firstpage
    52
  • Lastpage
    55
  • Abstract
    We have used Si0.3Ge0.7 to improve the hole mobility of La2O3 p-MOSFETs. A hole mobility of 55 cm2/V-s in nitrided La2O3/Si0.3Ge0.7 p-MOSFET is measured and 1.8 times higher than the 31 cm2/V-s mobility in nitrided La2O3/Si control p-MOSFET. The Ni germano-silicide shows a low sheet resistance of 4-6 Ω/□ and small junction leakage currents of 3×10-8 A/cm2 and 2×10-7 A/cm2 for respective P+N and N+P junctions.
  • Keywords
    Ge-Si alloys; MOSFET; electric resistance; hole mobility; lanthanum compounds; leakage currents; nickel compounds; semiconductor materials; La2O3-Si0.3Ge0.7; La2O3/Si0.3Ge0.7 p-MOSFET; Ni germanosilicide; NiSi0.3Ge0.7; hole mobility; junction leakage current; sheet resistance; Annealing; Diffraction; Electrons; Germanium silicon alloys; Ion implantation; Leakage current; MOSFET circuits; Silicon germanium; Voltage; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 2003 International Symposium on
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-7765-6
  • Type

    conf

  • DOI
    10.1109/VTSA.2003.1252550
  • Filename
    1252550
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2394460