DocumentCode
2395331
Title
III-V compund based heterostructure opto-thyristor for pulsed power applications
Author
Hur, J.H. ; Hadizad, P. ; Zhao, Hang ; Hummel, S. ; Osinski, J.S. ; Dapkus, P.D. ; Fetterman, H.R. ; Gundersen, M.A.
Author_Institution
University of Southern California
fYear
1991
fDate
16-19 June 1991
Firstpage
206
Lastpage
208
Abstract
An analysis od III-V compound based eterostructure opto-thyristor (HOT) for pulsed power switching application which require gate isolation, fast current rate of rise, and high gating gain is presented. Design, fabrication, and performance of the device are discussed. The device has AlGaAs/GaAs heterojunction whigh allows an efficient coupling of gatin light to the critical region of the device, thus improving the gating gain and the current rate of rise.
Keywords
Cathodes; Circuits; Diode lasers; Gallium arsenide; Heterojunctions; III-V semiconductor materials; MOCVD; Optical fiber devices; Photonic band gap; Pulse measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Pulsed Power Conference, 1991. Digest of Technical Papers. Eighth IEEE International
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7803-0177-3
Type
conf
DOI
10.1109/PPC.1991.733268
Filename
733268
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