DocumentCode :
2396297
Title :
Effects of Etching Holes on Capacitance and Tuning Range in MEMS Parallel Plate Variable Capacitors
Author :
Elshurafa, Arnro Mv ; El-Masry, Ezz I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Dalhousie Univ., Halifax, NS
fYear :
2006
fDate :
27-29 Dec. 2006
Firstpage :
221
Lastpage :
224
Abstract :
This paper presents extensive simulations of MEMS parallel plate variable capacitors with attention dedicated towards variations in etching holes´ properties. For various separation distances between the plates, different hole sizes and density were created and capacitances were extracted. Within typical values, it was found that the configuration of the holes might affect the tuning range by no more than 16% at extreme cases of their theoretical counterparts. Simulations were done using finite element modeling
Keywords :
capacitance; capacitors; etching; finite element analysis; micromechanical devices; MEMS; capacitance range; etching holes; finite element modeling; parallel plate variable capacitors; tuning range; Capacitance; Capacitors; Computational modeling; Concurrent computing; Electrostatics; Etching; Fabrication; Finite element methods; Micromechanical devices; Varactors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
System-on-Chip for Real-Time Applications, The 6th International Workshop on
Conference_Location :
Cairo
Print_ISBN :
1-4244-0898-9
Type :
conf
DOI :
10.1109/IWSOC.2006.348240
Filename :
4155293
Link To Document :
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