DocumentCode
2397236
Title
CCD wafer scale integration
Author
Suni, Paul P.
Author_Institution
Orbit Semicond. Inc., Sunnyvale, CA, USA
fYear
1995
fDate
18-20 Jan 1995
Firstpage
123
Lastpage
133
Abstract
Wafer scale CCD photodetector arrays of 26 million pixels or more are being fabricated on a limited production basis today. This paper provides an introduction to CCD wafer scale integration with an emphasis on common wafer scale CCD design architectures, applications and fabrication processes. Examples of wafer scale CCD products are reviewed, and a triple poly, double metal wafer scale CCD fabrication process is discussed in comparison with typical digital CMOS processes. Very large area CCD photodetector arrays designed and fabricated by Orbit Semiconductor are discussed in some detail. These include an 8 million pixel 3 cm by 6 cm wafer scale CCD imager for digital photography and a family of CCD sensors for intraoral digital dental radiography. Finally, future possibilities in wafer scale CCD´s are discussed
Keywords
CCD image sensors; integrated circuit design; integrated circuit technology; wafer-scale integration; 26 Mpixel; 3 cm; 6 cm; 8 Mpixel; CCD imager; CCD photodetector arrays; CCD sensors; CCD wafer scale integration; Orbit Semiconductor; design architectures; digital photography; intraoral digital dental radiography; triple poly double metal fabrication; CMOS process; Charge coupled devices; Charge-coupled image sensors; Dentistry; Digital photography; Fabrication; Photodetectors; Pixel; Production; Wafer scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Wafer Scale Integration, 1995. Proceedings., Seventh Annual IEEE International Conference on
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-2467-6
Type
conf
DOI
10.1109/ICWSI.1995.515446
Filename
515446
Link To Document