Title :
Highly strained GalnAs/GaAs 1.13 μm vertical cavity surface emitting laser with uncooled single mode operation
Author :
Kondo, Talcashi ; Arai, Masakazu ; Matsutani, Akihiro ; Miyamoto, Tomoyuki ; Koyama, Furnio
Author_Institution :
Microsyst. Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
In this paper highly strained GalnAs/GaAs 1.13 μm vertical cavity surface emitting laser with uncooled single mode operation were reported. Data transmission of 2.5 Gb/s with a standard single mode fibre of 10 km was demonstrated by using the uncooled VCSEL up to 80°C.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; optical communication equipment; optical fibre communication; surface emitting lasers; 1.13 micron; 10 Gbit/s; 10 km; 80 C; GaInAs-GaAs; data transmission; standard single mode fibre; uncooled VCSEL; uncooled single mode operation; vertical cavity surface emitting laser; Data communication; Gallium arsenide; Laser modes; Laser theory; Plasma temperature; Power generation; Quantum well lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1252893
