InP-based VCSELs in the 1.4 to 2 μm wavelength range for optical communication and absorption spectroscopy

Author

Ortsiefer, M. ; Shau, R. ; Rosskopf, J. ; Fürfanger, M. ; Amann, M.-C. ; Lauer, C. ; Maute, M. ; Böhm, G. ; Lackner, M. ; Winter, F.

Author_Institution

VERTILAS GmbH, Garching, Germany

Volume

2

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

505

Abstract

With the buried tunnel junctions technology a breakthrough in the dynamic and stationary losing performance has been achieved for long-wavelength InP-based VCSELs making these lasers ideally suited for broadband communications and gas sensing applications.

Keywords

III-V semiconductors; gas sensors; indium compounds; infrared spectra; infrared spectroscopy; measurement by laser beam; optical communication equipment; optical interconnections; spectrochemical analysis; spectroscopic light sources; surface emitting lasers; 1.4 to 2 micron; absorption spectroscopy; broadband communications; buried tunnel junctions technology; dynamic losing performance; gas sensing applications; long-wavelength InP-based VCSEL; optical communication; stationary losing performance; Absorption; Gas lasers; Laser tuning; Mirrors; Optical fiber communication; Optical interconnections; Power generation; Spectroscopy; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1252895

Filename

1252895