Title :
Effect of processing temperature on polysilicon thin film transistors for active matrix LCDs
Author :
Mitra, U. ; Khan, B. ; Venkatesan, M. ; Stupp, E.H.
Author_Institution :
North American Philips Corp., Briarcliff Manor, NY, USA
Abstract :
The effect of processing conditions on polysilicon TFT (thin-film transistor) performance is explained. By careful selection of process techniques excellent devices are obtained, independent of processing temperature. It is possible to fabricate polysilicon TFTs at low temperature with performance comparable to that of high-temperature TFTs by replacing the high-temperature steps with low-temperature steps which have the same effect on the material and device structure. These TFTs are used in full-resolution LCDs (liquid crystal displays) for projection television.<>
Keywords :
elemental semiconductors; insulated gate field effect transistors; liquid crystal displays; semiconductor technology; silicon; television equipment; thin film transistors; active matrix LCDs; liquid crystal displays; polysilicon thin film transistors; processing temperature; projection television; semiconductor technology; Active matrix liquid crystal displays; Dielectric devices; Fabrication; Implants; Oxidation; Plasma devices; Plasma properties; Plasma temperature; Silicon; Thin film transistors;
Conference_Titel :
Display Research Conference, 1991., Conference Record of the 1991 International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0213-3
DOI :
10.1109/DISPL.1991.167471
