Characterization and modeling of high-voltage field-stop IGBTs

Author

Kang, X. ; Caiafa, A. ; Santi, E. ; Hudgins, J.L. ; Palmer, P.R.

Author_Institution

Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA

Volume

3

fYear

2002

fDate

13-18 Oct. 2002

Firstpage

2175

Abstract

The HVFS (high voltage field stop) IGBT is becoming a promising power device in high power application with the robust characteristics offered by the field stop technology, which combines the inherent advantages offered by PT (punch-through) and NPT (nonpunch-through) structures while overcoming the drawbacks of each structure. In this work an electrothermal physics-based model for the field stop IGBT is developed and validated using experimental results for a commercial 1200 V/60 A field stop IGBT over the entire temperature range specified in the data sheets. The validated model is then used to simulate a 6.5 kV field stop IGBT. The simulation results are compared with experimental results published in the literature and good agreement is obtained.

Keywords

insulated gate bipolar transistors; 1200 V; 6.5 kV; 60 A; electrothermal physics-based model; high power application; high voltage field-stop IGBT; nonpunch-through structures; power device; punch-through structures; robust characteristics; simulation; Buffer layers; Charge carrier lifetime; Electrothermal effects; Insulated gate bipolar transistors; Power engineering and energy; Robustness; Tail; Technological innovation; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the

Conference_Location

Pittsburgh, PA, USA

ISSN

0197-2618

Print_ISBN

0-7803-7420-7

Type

conf

DOI

10.1109/IAS.2002.1043833

Filename

1043833