• DocumentCode
    23998
  • Title

    Nanometer-Scale {\\rm HfO}_{x} RRAM

  • Author

    Zhiping Zhang ; Yi Wu ; Wong, H.-S Philip ; Wong, S. Simon

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • Volume
    34
  • Issue
    8
  • fYear
    2013
  • fDate
    Aug. 2013
  • Firstpage
    1005
  • Lastpage
    1007
  • Abstract
    HfOx-based resistive random access memory with an active area down to few nanometers in diameter is fabricated and characterized. Scaling trends for forming and switching characteristics are presented. For the smallest device with an active area of few nanometers in diameter, ac switching endurance of 108 cycles with more than 100 × resistance window is demonstrated. In addition, multiple resistance states are shown to be stable after 105 read cycles and 105 s baking at 150 °C.
  • Keywords
    hafnium compounds; random-access storage; AC switching endurance; HfO; forming characteristics; nanometerscale halfnium oxide RRAM; resistance state; resistance window; resistive random access memory; switching characteristics; Bipolar switching; Hafnium oxide $({rm HfO}_{x})$; forming process; resistive random access memory (RRAM);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2265404
  • Filename
    6553186
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=23998