DocumentCode
2400949
Title
Low threshold current strained lnAIGaAs/ AIGaAs quantum well lasers grown by metalorganic vapour phase epitaxy
Author
Vermeire, G. ; Vermaerke, F. ; Van Daele, Peter ; Demeester, Piet
fYear
1994
fDate
28 Aug-2 Sep 1994
Firstpage
397
Lastpage
397
Keywords
Diode lasers; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Laser excitation; Pump lasers; Quantum well lasers; Semiconductor lasers; Solid lasers; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 1994 Conference on
Print_ISBN
0-7803-1789-0
Type
conf
DOI
10.1109/CLEOE.1994.636728
Filename
636728
Link To Document