DocumentCode :
2401209
Title :
In0.53Ga0.47As/In0.52Al0.48As SACM APDs for single photon detection
Author :
Karve, G. ; Zheng, X. ; Holmes, A.L. ; Campbell, J.C. ; Kinsey, Geoffrey S. ; Boisvert, J.C. ; Isshiki, T.D. ; Sudharsanan, R. ; Bethune, D.S. ; Risk, W.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Volume :
2
fYear :
2003
fDate :
27-28 Oct. 2003
Firstpage :
769
Abstract :
We have demonstrated single photon counting at 1.52 μm in custom separate-absorption-charge-multiplication (SACM) APDs with In0.53Ga0.47As absorption and In0.52Al0.48As multiplication layer. The operating parameters such as temperature, excess bias and discriminator threshold have been optimized for better single photon detection performance.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; optimisation; photodetectors; photon counting; 1.52 micron; APD; In0.53Ga0.47As-In0.52Al0.48As; absorption layer; custom separate-absorption-charge-multiplication; dark count; discriminator threshold; multiplication layer; operating parameters; optimization; single photon counting; single photon detection; Avalanche photodiodes; Cryptography; Infrared detectors; Luminescence; Microelectronics; Pulsed power supplies; Reflectometry; Spectroscopy; Temperature distribution; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN :
1092-8081
Print_ISBN :
0-7803-7888-1
Type :
conf
DOI :
10.1109/LEOS.2003.1253026
Filename :
1253026
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2401209
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