DocumentCode
2401645
Title
Occupation of higher conduction and valence subbands by resonant tunneling in GaAs/AIAs superlattices
Author
Klann, R. ; Grahn, H.T. ; Ploog, K.
fYear
1994
fDate
28 Aug-2 Sep 1994
Firstpage
417
Lastpage
417
Keywords
Charge carrier processes; Computer aided analysis; Gallium arsenide; Optical superlattices; Photonic band gap; Resonance; Resonant tunneling devices; Spectroscopy; Stimulated emission; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 1994 Conference on
Print_ISBN
0-7803-1789-0
Type
conf
DOI
10.1109/CLEOE.1994.636774
Filename
636774
Link To Document