Title :
The HgCdTe electron avalanche photodiode
Author :
Beck, Jeff D. ; Wan, Chang-Feng ; Kinch, Mike A. ; Robinson, James E. ; Ma, Feng ; Campbell, Joe C.
Abstract :
In this paper, a theory for avalanche gain has been developed that takes into account the unique band structure of HgCdTe with allowance being made for the relevant scattering mechanisms of both electrons and holes. These theoretical arguments justify proposition, based on experimental results, that the avalanche gain process in 2 μm to 11 μm cutoff photodiodes is characterised by single carrier ionisation process.
Keywords :
avalanche breakdown; avalanche photodiodes; band structure; cadmium compounds; mercury compounds; 2 to 11 micron; HgCdTe; HgCdTe electron avalanche photodiode; avalanche gain; band structure; carrier ionisation process; electron scattering mechanism; hole scattering mechanism; Absorption; Avalanche photodiodes; Bandwidth; Diodes; Doping; Electron mobility; Impurities; Mercury (metals); Noise measurement; Silicon;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253067
