DocumentCode :
2401858
Title :
Low dark current 4H-SiC avalanche photodiodes
Author :
Guo, Xiangyi ; Beck, Ariane ; Yang, Bo ; Campbell, Joe C.
Author_Institution :
Texas Univ., Austin, TX, USA
Volume :
2
fYear :
2003
fDate :
27-28 Oct. 2003
Firstpage :
851
Abstract :
In this paper, we study the mechanisms of the 4H-SiC avalanche photodiode (APD) dark current and find that the mesa sidewall leakage current is the primary contributor. Improving the sidewall passivation decreases the device dark current.
Keywords :
avalanche photodiodes; hydrogen; leakage currents; passivation; photodetectors; silicon compounds; wide band gap semiconductors; 4H-SiC avalanche photodiode; SiC-H; device dark current; mesa sidewall leakage current; sidewall passivation; Annealing; Avalanche photodiodes; Cleaning; Current-voltage characteristics; Dark current; Electric breakdown; Etching; Oxidation; Passivation; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN :
1092-8081
Print_ISBN :
0-7803-7888-1
Type :
conf
DOI :
10.1109/LEOS.2003.1253068
Filename :
1253068
Link To Document :
بازگشت