Title :
Low dark current 4H-SiC avalanche photodiodes
Author :
Guo, Xiangyi ; Beck, Ariane ; Yang, Bo ; Campbell, Joe C.
Author_Institution :
Texas Univ., Austin, TX, USA
Abstract :
In this paper, we study the mechanisms of the 4H-SiC avalanche photodiode (APD) dark current and find that the mesa sidewall leakage current is the primary contributor. Improving the sidewall passivation decreases the device dark current.
Keywords :
avalanche photodiodes; hydrogen; leakage currents; passivation; photodetectors; silicon compounds; wide band gap semiconductors; 4H-SiC avalanche photodiode; SiC-H; device dark current; mesa sidewall leakage current; sidewall passivation; Annealing; Avalanche photodiodes; Cleaning; Current-voltage characteristics; Dark current; Electric breakdown; Etching; Oxidation; Passivation; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253068
