Analytical modeling and staggered-planar structural analysis for organic field effect transistor

This paper presents device physics based on electrical modeling of staggered and planar structures of Organic Field Effect Transistors (OFETs). It is preferable to have compact dc models that can be used in simulations to forecast and optimize performance of OFETs. Since a unified compact model is not sufficient to derive all characteristics using materials and fabrication processes, therefore, several analytical models have been proposed. For each model, an efficient estimation of model equation is undertaken in terms of dependent and independent variables, model parameters and substantial operating parameters in order to make better mapping of model equations into a corresponding device circuit. Subthreshold current, channel length modulation and channel mobility trends are described. Finally, comparative analysis of staggered and planar structures has been analyzed using SILVACO ATLAS 2-D numerical device simulator. Observations reveal that OFET with staggered structure exhibit superior performance as compared to those with planar structure in terms of mobility, contact resistance and current.