DocumentCode :
2403451
Title :
Resonant-tunneling diode on the basis of silicon multilayer cathode
Author :
Goncharuk, Nina M.
Author_Institution :
Res. Inst. Orion, Kiev
fYear :
2007
fDate :
10-12 Oct. 2007
Firstpage :
323
Lastpage :
326
Abstract :
A numerical model of a new type of resonant-tunnelling diode based on electron resonant-tunnelling emission from silicon cathode with SiOx-Si multilayer coating has been developed. The model is founded on joint numerical solution of the Schrodinger and Poisson equations system for the time-independent electron wave function, electric field, current and voltage and a small-signal analysis of the last three alternating components. Emitter accumulation layer and contacts presence and an electron delay in a coating quantum well and in a diode transit layer were taken into account. The investigations have shown presence of a negative resistance microwave frequency band for the diode with the electron transit angle from 0 to 2pi/3. The upper frequency of the band is 1012 GHz when resonant tunnelling occurs through the highest resonant level in a quantum well.
Keywords :
Poisson equation; Schrodinger equation; cathodes; coatings; negative resistance; quantum well devices; resonant tunnelling diodes; silicon compounds; Poisson equations; Schrodinger equations; SiO-Si; coating quantum well; diode transit layer; electron delay; electron resonant-tunnelling emission; microwave frequency band; multilayer coating; negative resistance; resonant-tunneling diode; silicon multilayer cathode; small-signal analysis; Cathodes; Coatings; Diodes; Electron emission; Nonhomogeneous media; Numerical models; Poisson equations; Resonant tunneling devices; Silicon; Wave functions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radar Conference, 2007. EuRAD 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-004-0
Type :
conf
DOI :
10.1109/EURAD.2007.4405002
Filename :
4405002
Link To Document :
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