DocumentCode
240348
Title
Behavioral and transistor modeling of multi-phase injection ring oscillator
Author
Ardalan, S. ; Panwalkar, Shweta ; Ali, Mohamed
Author_Institution
Center for Analog & Mixed Signal, San Jose State Univ., San Jose, CA, USA
fYear
2014
fDate
4-7 May 2014
Firstpage
1
Lastpage
4
Abstract
This paper presents a system and transistor level analysis of multi-phase injection locking in ring oscillators. Injection strength defines noise reduction and locking range. Behavioral and transistor models of locking compare the effectiveness of multi-phase and single-phase injection. Noise analysis shows that injection lowers the noise floor.
Keywords
electron device noise; nonlinear network analysis; oscillators; behavioral modeling; injection strength; locking range; multiphase injection ring oscillator; noise reduction; transistor modeling; Injection-locked oscillators; Noise reduction; Phase noise; Ring oscillators; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Computer Engineering (CCECE), 2014 IEEE 27th Canadian Conference on
Conference_Location
Toronto, ON
ISSN
0840-7789
Print_ISBN
978-1-4799-3099-9
Type
conf
DOI
10.1109/CCECE.2014.6901152
Filename
6901152
Link To Document