Title :
Thin porous silicon fabricated by electrochemical etching in novel ammonium fluoride solution for optoelectronic applications
Author :
Hubarevich, A. ; Yu, H.Y. ; Wang, F. ; Sun, X.W. ; Smirnov, A.
Author_Institution :
Sch. of EEE, Nanyang Technol. Univ., Singapore, Singapore
Abstract :
A novel approach to electrochemically fabricate thin nanoporous silicon using ammonia fluoride solution is proposed and experimentally demonstrated. It is shown that highly uniform and thin nanoporous silicon layers (down to 50 nm) with high porosity can be formed in a reproducible manner under low current densities (0.01-0.1 mA/cm2) and low fluorine ion concentration (1%wt). Structural and opto-electrical properties of the porous silicon created in a wide range of current densities and ammonium fluoride concentrations are presented.
Keywords :
current density; electro-optical effects; electrochemical analysis; elemental semiconductors; etching; liquid phase deposition; nanofabrication; nanoporous materials; porosity; porous semiconductors; semiconductor growth; semiconductor thin films; silicon; Si; ammonium fluoride solution; current density; electrochemical etching; fluorine ion concentration; optoelectrical properties; optoelectronic applications; porosity; structural properties; thin nanoporous silicon layers; Atomic layer deposition; Current density; Electroluminescence; Etching; Schottky diodes; Silicon;
Conference_Titel :
Photonics Global Conference (PGC), 2010
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-9882-6
DOI :
10.1109/PGC.2010.5705934