DocumentCode
2404562
Title
Method for determining temperature lower limit state of the extrinsic saturation
Author
Schiopu, Paul ; Lakatos, Eugeii ; Degeratu, Vasile
Author_Institution
Bucharest Politehnica Univ., Romania
Volume
2
fYear
1998
fDate
6-10 Oct 1998
Firstpage
379
Abstract
The injection of electric active impurities in a semiconductor favours the extrinsic mechanism, generating mobile carriers in the prejudice of the intrinsic mechanism and creating an unbalanced between the concentration of the conducting electrons and the holes in a semiconductor. This paper will present a computation model of temperature where the extrinsic impurities ionizate mechanism cease to supply charge carriers. The model is used to establish this temperature in the case of silicon
Keywords
carrier density; semiconductor doping; Si; carrier concentration; carrier generation; carrier injection; computation model; donor dopant; electrical activity; extrinsic saturation; impurity ionization; semiconductor; silicon; temperature dependence; Charge carrier processes; Computational modeling; Computer aided software engineering; Electrons; Ionization; Semiconductor impurities; Silicon; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location
Sinaia
Print_ISBN
0-7803-4432-4
Type
conf
DOI
10.1109/SMICND.1998.733767
Filename
733767
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