Double heterostructure InP HBT technology for high resolution A/D converters

Author

Jensen, J.F. ; Cosand, A.E. ; Stanchina, W.E. ; Walden, R.H. ; Lui, T. ; Brown, Y.K. ; Montes, M. ; Elliott, K. ; Kirkpatrick, C.G.

Author_Institution

Hughes Res. Labs., Malibu, CA, USA

fYear

1994

fDate

16-19 Oct. 1994

Firstpage

224

Lastpage

227

Abstract

For high resolution analog circuits we have developed a double heterostructure bipolar transistor (DHBT) technology using InP as the collector material. Our baseline DHBTs have demonstrated current gain /spl beta/, early voltage V/sub A/, f/sub T/, and f/sub max/ of 55, 100 V, 70 GHz, and 60 GHz, respectively. We have implemented an analog cell library to build high resolution /spl Delta//spl Sigma/ modulator circuits in this technology. We have used the cell library to demonstrate a first order modulator and to verify the design of these analog cells. At a sample rate of 4 GSPS and an OSR equal to 32 (i.e., input bandwidth of 62.5 MHz) the first order modulator demonstrated an SNR of 40.3 dB. This first order modulator operates using /spl plusmn/5 V power supplies and dissipates 572 mW.

Keywords

III-V semiconductors; bipolar integrated circuits; heterojunction bipolar transistors; indium compounds; integrated circuit technology; sigma-delta modulation; /spl Delta//spl Sigma/ modulator; 5 V; 572 mW; 60 to 70 GHz; 62.5 MHz; A/D converters; InP; SNR; analog cell library; current gain; double heterostructure InP HBT technology; early voltage; high resolution analog circuits; Analog circuits; Bandwidth; Bipolar transistors; DH-HEMTs; Delta modulation; Heterojunction bipolar transistors; Indium phosphide; Libraries; Power supplies; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual

Conference_Location

Phildelphia, PA, USA

ISSN

1064-7775

Print_ISBN

0-7803-1975-3

Type

conf

DOI

10.1109/GAAS.1994.636972

Filename

636972