DocumentCode
2404592
Title
1.3μm hybrid silicon electroabsorption modulator
Author
Tang, Yongbo ; Peters, Jonathan D. ; Bowers, John E.
Author_Institution
ECE Dept., Univ. of California Santa Barbara, Santa Barbara, CA, USA
fYear
2012
fDate
20-23 May 2012
Firstpage
16
Lastpage
17
Abstract
A high speed, efficient hybrid silicon electroabsorption modulator working at 1.3 μm is demonstrated. This device has a bandwidth of 32 GHz, an extinction ratio of over 5 dB/V across 30 nm wavelength span and a footprint of 150 μm x 350 μm.
Keywords
electro-optical modulation; electroabsorption; optical communication equipment; optical interconnections; silicon; Si; bandwidth 32 GHz; extinction ratio; hybrid silicon electroabsorption modulator; optical interconnects; wavelength 1.3 mum; Bandwidth; Extinction ratio; Optical modulation; Optical waveguides; Resistance; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Interconnects Conference, 2012 IEEE
Conference_Location
Santa Fe, NM
Print_ISBN
978-1-4577-1620-1
Type
conf
DOI
10.1109/OIC.2012.6224470
Filename
6224470
Link To Document