Title :
A X-band 4-bit mHEMT phase shifter
Author :
Khalil, Ahmed I. ; Mahfoudi, Mustapha ; Traut, Frank ; Shifrin, Mitch ; Chavez, Joseph
Author_Institution :
Hittite Microwave Corp., Chelmsford, MA, USA
fDate :
30 Oct.-2 Nov. 2005
Abstract :
A 4-bit X-band phase shifter is developed using 0.15μm mHEMT technology. The mHEMT technology has an (Ron . Coff) = 0.25 pS, minimizing the switch insertion loss. Three different bit topologies are used to achieve both first pass success and best possible performance. The phase shifter operates between 8-12 GHz with 5.5 dB mean insertion loss, +/- 0.7 dB amplitude error, less than 5° RMS phase error, and better than 10 dB return losses. The die area is 1.7 mm2.
Keywords :
high electron mobility transistors; microwave circuits; microwave phase shifters; microwave transistors; 0.15 micron; 0.25 ps; 4 bit; 5.5 dB; RMS phase error; X-band phase shifter; amplitude error; bit topologies; mHEMT phase shifter; mHEMT technology; mean insertion loss; switch insertion loss; Bandwidth; Circuit topology; Costs; Insertion loss; Laboratories; Microwave technology; Phase shifters; Phased arrays; Switches; mHEMTs;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531754
