Title :
Tutorial on modeling parasitic coupling effects in reliability verification
Author :
Nagaraj, N.S. ; Balsara, Poras ; Cantrell, Cyrus
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Summary form only given. As technology scaling continues in the deep sub-micron domain, interconnect parasitics have become dominant in determining chip performance and functionality. R(L)C parasitics play a major role in chip performance, functionality and signal integrity. In addition, parasitics have significant impact on chip reliability due to electromigration (EM), timing dependent dielectric breakdown (TDDB) and channel hot carrier (CHC) effects. This tutorial covers several aspects of interconnect modeling from chip reliability perspective. Special emphasis is made on importance of modeling parasitic coupling in reliability analysis. A comparative study of coupled and decoupled interconnect modeling is discussed with simple examples and real life circuits
Keywords :
ULSI; electromigration; hot carriers; integrated circuit interconnections; integrated circuit modelling; integrated circuit reliability; semiconductor device breakdown; R(L)C parasitics; channel hot carrier effects; chip reliability; coupled modeling; decoupled modeling; deep sub-micron domain; electromigration; functionality; interconnect modeling; interconnect parasitics; parasitic coupling effects; reliability analysis; reliability verification; signal integrity; technology scaling; timing dependent dielectric breakdown; Coupling circuits; Dielectric breakdown; Electromigration; Hot carriers; Instruments; Integrated circuit interconnections; Timing; Tutorial; Very large scale integration;
Conference_Titel :
Design Automation Conference, 2002. Proceedings of ASP-DAC 2002. 7th Asia and South Pacific and the 15th International Conference on VLSI Design. Proceedings.
Conference_Location :
Bangalore
Print_ISBN :
0-7695-1441-3
DOI :
10.1109/ASPDAC.2002.994904