• DocumentCode
    2405751
  • Title

    Self-aligned ground-plane FDSOI MOSFET

  • Author

    Xiong, W. ; Ramkumar, K. ; Jang, S.J. ; Park, J.T. ; Colinge, J.P.

  • Author_Institution
    Cypress Semicond., San Jose, CA, USA
  • fYear
    2002
  • fDate
    7-10 Oct 2002
  • Firstpage
    23
  • Lastpage
    24
  • Abstract
    We report the fabrication and the electrical characteristics of fully depleted n-channel SOI MOSFETs with a self-aligned ground-plane electrode in the silicon mechanical substrate underneath the buried oxide. The ground-plane electrode is shown to reduce short-channel effects.
  • Keywords
    MOSFET; semiconductor device measurement; silicon-on-insulator; electrical characteristics; fabrication; fully depleted n-channel SOI MOSFETs; self-aligned ground-plane FDSOI MOSFET; self-aligned ground-plane electrode; short-channel effects; MOSFETs; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, IEEE International 2002
  • Print_ISBN
    0-7803-7439-8
  • Type

    conf

  • DOI
    10.1109/SOI.2002.1044401
  • Filename
    1044401
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2405751