Title :
A high-voltage lateral IGBT with significantly improved on-state characteristics on SOI for an advanced PDP scan driver IC
Author :
Sumida, H. ; Hirabayashi, A. ; Kobayashi, H.
Author_Institution :
Fuji Electr. Co. Ltd., Nagano, Japan
Abstract :
The authors have attempted to develop a second generation LIGBT with significantly improved on-state characteristics compared against an existing LIGBT. The paper shows the characteristics of the developed 2nd generation LIGBT and introduces a new PDP scan driver IC fabricated by using the 2nd generation LIGBT.
Keywords :
bipolar integrated circuits; driver circuits; elemental semiconductors; flat panel displays; insulated gate bipolar transistors; plasma displays; power bipolar transistors; power integrated circuits; silicon; silicon-on-insulator; 2nd generation LIGBT; SOI; Si-SiO2; advanced PDP scan driver IC; high-voltage lateral IGBT; on-state characteristics; second generation LIGBT; Bipolar integrated circuits; Driver circuits; Flat panel displays; Insulated gate bipolar transistors; Power bipolar transistors; Power integrated circuits; Silicon; Silicon on insulator technology;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044418
