DocumentCode
2406341
Title
MMIC-oscillator designs for ultra low phase noise
Author
Zirath, Herbert ; Jacobsson, Harald ; Bao, M. ; Ferndahl, Mattias ; Kozhuharov, Rumen
Author_Institution
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
fYear
2005
fDate
30 Oct.-2 Nov. 2005
Abstract
Various balanced VCO-topologies like cross-connected (negative gm), coupled cross-connected, coupled Colpitt and Clapp oscillators, all with a fully integrated tank are reported. In this study, different MMIC/RFIC technologies such as SiGe HBT, InGaP-GaAs-HBT, PHEMT, MHEMT, and CMOS are represented and parameters such as phase-noise, output power, dc-power consumption, and tuning range are compared. All oscillators are designed for low phase noise. Low phase noise can be achieved by CMOS, PHEMT and MHEMT technologies although SiGe and InGaP-GaAs HBT based oscillators have demonstrated the lowest phase noise. Both fundamental and second harmonic VCOs are represented in the evaluation.
Keywords
CMOS integrated circuits; HEMT integrated circuits; MMIC oscillators; gallium arsenide; heterojunction bipolar transistors; indium compounds; phase noise; silicon compounds; voltage-controlled oscillators; CMOS technologies; InGaP-GaAs; MHEMT technologies; PHEMT technologies; SiGe; heterojunction bipolar transistor based oscillators; low phase noise; monolithic microwave integrated circuits; power consumption; tuning range; voltage controlled oscillators; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; MMICs; Oscillators; PHEMTs; Phase noise; Radiofrequency integrated circuits; Silicon germanium; mHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN
0-7803-9250-7
Type
conf
DOI
10.1109/CSICS.2005.1531813
Filename
1531813
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