Title :
Theoretical investigation of silicon MOS-type plasmonic slot waveguide based electrooptic modulators
Author :
Zhu, Shiyang ; Lo, Guo-Qiang ; Kwong, Dim-Lee
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
Abstract :
A silicon nanoplasmonic electrooptic modulator is designed and theoretically analyzed, which is composed of lateral silicon metal-SiO2-Si-metal plasmonic hybrid slot waveguides for phase shifter and ultracompact V-shape splitter/combiner to link the plasmonic waveguides and the Si dielectric waveguides, thus it can be directly implemented into the conventional Si dielectric waveguide based electronic photonic integrated circuits and be fabricated using fully CMOS compatible processes. The modulator parameters are optimized through a systematic analysis using 2D numerical simulation. For a modulator with 3-μm-long Cu-SiO2(2nm)-Si(50 nm)-Cu phase shifter and 0.35-μm-long splitter/combiner operating at 1.55-μm wavelength, numerical simulation shows insertion loss of ~ -8.7 dB, extinction ratio of -6.8 dB - which is achieved at -5.6 V bias, and speed of ~500 GHz.
Keywords :
CMOS integrated circuits; copper; electro-optical modulation; elemental semiconductors; extinction coefficients; integrated optics; integrated optoelectronics; nanophotonics; optical beam splitters; optical fabrication; optical phase shifters; optical waveguides; plasmonics; silicon; silicon compounds; CMOS compatible processes; Cu-SiO2-Si-Cu; beam combiner; dielectric waveguides; extinction ratio; hybrid slot waveguides; insertion loss; nanoplasmonic electrooptic modulator; optical design; optical fabrication; phase shifter; photonic integrated circuit; silicon MOS-type plasmonic slot waveguide; size 0.35 mum; size 2 nm; size 3 mum; size 50 nm; ultracompact V-shape splitter; wavelength 1.55 mum; Couplings; Dielectrics; Indexes; Modulation; Optical waveguides; Plasmons; Silicon;
Conference_Titel :
Photonics Global Conference (PGC), 2010
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-9882-6
DOI :
10.1109/PGC.2010.5706117