• DocumentCode
    2408459
  • Title

    Time-dependent dielectric breakdown of a recessed channel DRAM access device

  • Author

    Owens, T. ; Hwang, D. ; Vaidyanathan, P. ; Parekh, K.

  • Author_Institution
    R&D Process Dev., Micron Technol., Inc., Boise, ID
  • fYear
    0
  • fDate
    0-0 0
  • Lastpage
    30
  • Abstract
    A recessed access device (RAD) used in a DRAM cell has exhibited advantages over the conventional planar access device, including retention time improvement. However, worse time-dependent dielectric breakdown (TDDB) characteristics were observed for RAD. The degraded TDDB performance is primarily attributed to thinner oxide growth in the recess
  • Keywords
    DRAM chips; electric breakdown; integrated circuit reliability; DRAM cell; oxide reliability; recessed access device; time-dependent dielectric breakdown; Degradation; Dielectric breakdown; Electric breakdown; Electrodes; Leakage current; Random access memory; Research and development; Scalability; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics and Electron Devices, 2006. WMED '06. 2006 IEEE Workshop on
  • Conference_Location
    Boise, ID
  • Print_ISBN
    1-4244-0374-X
  • Type

    conf

  • DOI
    10.1109/WMED.2006.1678293
  • Filename
    1678293
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2408459