Title :
Integrated silicon nanowire diodes
Author :
Jackson, Justin B. ; Jun, Sun-Gon ; Kapoor, Divesh ; Miller, Mark S.
Author_Institution :
Dept. Electr. & Comput. Eng., Utah Univ., Salt Lake City, UT
Abstract :
IV-measurements were performed on integrated silicon nanowires grown via atmospheric vapor phase epitaxy. The silicon nanowires were grown on a n-type substrate using gold catalysts, insulated using a spin-on glass, and contacted using aluminum. Rectifying behavior and low recombination is observed in the nanowire with a forward bias
Keywords :
nanowires; semiconductor diodes; silicon; vapour phase epitaxial growth; atmospheric vapor phase epitaxy; gold catalysts; integrated silicon nanowire diodes; n-type substrate; spin-on glass; Aluminum; CMOS technology; Epitaxial growth; Etching; Glass; Gold; Nanoscale devices; Semiconductor diodes; Silicon; Substrates;
Conference_Titel :
Microelectronics and Electron Devices, 2006. WMED '06. 2006 IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
1-4244-0374-X
DOI :
10.1109/WMED.2006.1678303
