• DocumentCode
    2408656
  • Title

    Integrated silicon nanowire diodes

  • Author

    Jackson, Justin B. ; Jun, Sun-Gon ; Kapoor, Divesh ; Miller, Mark S.

  • Author_Institution
    Dept. Electr. & Comput. Eng., Utah Univ., Salt Lake City, UT
  • fYear
    0
  • fDate
    0-0 0
  • Lastpage
    48
  • Abstract
    IV-measurements were performed on integrated silicon nanowires grown via atmospheric vapor phase epitaxy. The silicon nanowires were grown on a n-type substrate using gold catalysts, insulated using a spin-on glass, and contacted using aluminum. Rectifying behavior and low recombination is observed in the nanowire with a forward bias
  • Keywords
    nanowires; semiconductor diodes; silicon; vapour phase epitaxial growth; atmospheric vapor phase epitaxy; gold catalysts; integrated silicon nanowire diodes; n-type substrate; spin-on glass; Aluminum; CMOS technology; Epitaxial growth; Etching; Glass; Gold; Nanoscale devices; Semiconductor diodes; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics and Electron Devices, 2006. WMED '06. 2006 IEEE Workshop on
  • Conference_Location
    Boise, ID
  • Print_ISBN
    1-4244-0374-X
  • Type

    conf

  • DOI
    10.1109/WMED.2006.1678303
  • Filename
    1678303
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2408656