Characterization of negative differential resistance in chalcogenide devices containing silver

Author

Bregaj, Armand ; Campbell, Kristy A.

Author_Institution

Dept. of Electr. & Comput. Eng., Boise State Univ., ID

fYear

0

fDate

0-0 0

Lastpage

62

Abstract

Summary form only given. Chalcogenide materials are compounds that contain one of the group VI elements such as sulfur (S), selenium (Se), and tellurium (Te). These materials are presently under research in industry and academia for their potential use in electronic memory devices. An electrical property called negative differential resistance (NDR) has been observed in chalcogenide devices containing silver (Ag). NDR describes the I-V characteristics of the device where the resistance has a negative slope. Some of the devices that operate in the NDR region are the tunnel diode, resonant tunnel diode, unijunction transistor, and Gunn diode. The research work presented in this poster includes the measured I-V characteristics of chalcogenide devices exhibiting the NDR property. The electrical data obtained is compared with existing device models to determine a potential mechanism responsible for the observed NDR in silver-containing chalcogenide devices

Keywords

chalcogenide glasses; selenium; semiconductor device models; silver; sulphur; tellurium; Ag; Gunn diode; S; Se; Te; chalcogenide materials; electronic memory devices; negative differential resistance; resonant tunnel diode; unijunction transistor; Diodes; Electric resistance; Electrical resistance measurement; Electronics industry; Gunn devices; Industrial electronics; Resonant tunneling devices; Silver; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electron Devices, 2006. WMED '06. 2006 IEEE Workshop on

Conference_Location

Boise, ID

Print_ISBN

1-4244-0374-X

Type

conf

DOI

10.1109/WMED.2006.1678311

Filename

1678311