TCAD solutions for submicron copper interconnect

The demanding task of assessing a long range interconnect reliability can only be achieved by combination of experimental and TCAD methods. A basis for TCAD tools is a sophisticated physical model which takes into account the microstructural characteristics of copper. In this work a general electromigration model is presented with a special focus on the influence of grain boundaries and mechanical stress. The possible calibration and usage scenarios of electromigration tools are discussed. The physical soundness of the model is proven by three-dimensional simulations of typical dual-damascene structures used in accelerated electromigration testing.