Linearity and efficiency optimisation in microwave power amplifier design

Author

Colantonio, P. ; Giannini, F. ; Limiti, E. ; Nanni, A. ; Camarchia, V. ; Teppati, V. ; Pirola, M.

Author_Institution

Univ. di Roma Tor Vergata, Rome

fYear

2007

fDate

9-12 Oct. 2007

Firstpage

1081

Lastpage

1084

Abstract

In this contribution the minimisation of asymmetry between lower and upper side band intermodulation products will be discussed, starting from a Volterra analysis approach. Base-band and harmonic device terminations effects will be analysed, identifying novel conditions minimising IMD asymmetry and IM₃ power levels. Such conditions, not relying on base-band terminations, are the basis for IM₃ products minimisation via second harmonic load selection. The proposed criterion is then verified by harmonic load-pull measurements on a GaN HEMT under two-tone excitation. Measurements agree with the analysis, demonstrating a null IMD asymmetry and 6 dBc increase in C/I₃, without affecting output power (34 dBm @ 1 dB compression) and power added efficiency performance (65% @ 1 dB compression).

Keywords

III-V semiconductors; Volterra equations; gallium compounds; high electron mobility transistors; microwave field effect transistors; microwave power amplifiers; wide band gap semiconductors; GaN; HEMT; Volterra analysis; asymmetry minimisation; base-band device terminations; efficiency 65 percent; harmonic device terminations; harmonic load-pull measurements; intermodulation products; microwave power amplifier design; second harmonic load selection; Design optimization; Gallium nitride; HEMTs; Harmonic analysis; Linearity; Microwave amplifiers; Microwave devices; Power amplifiers; Power measurement; Power system harmonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-001-9

Type

conf

DOI

10.1109/EUMC.2007.4405385

Filename

4405385