Title :
Influence of hydrogen annealing on NBTI performance
Author :
Jin, L.J. ; Kuan, H.P. ; Sim, D. ; Mukhopadhyay, M.
Author_Institution :
Syst. on Silicon Manuf. Co. Pte. Ltd., Singapore
Abstract :
The effect of hydrogen annealing after local interconnect layer (LIL) formation and before contact/metal was evaluated with negative bias temperature instability (NBTI), electrical testing and yield in 0.14 mum embedded flash. No significant difference was observed in electrical testing and yield amongst all splits. However, difference was observed from NBTI test. This paper mainly summarizes the influence of hydrogen annealing on NBTI performance.
Keywords :
annealing; integrated circuit interconnections; integrated circuit testing; thermal stability; NBTI; electrical testing; hydrogen annealing; local interconnect layer formation; negative bias temperature instability; Annealing; Contacts; Hydrogen; Manufacturing; Negative bias temperature instability; Niobium compounds; Stress; Testing; Titanium compounds; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2039-1
Electronic_ISBN :
978-1-4244-2040-7
DOI :
10.1109/IPFA.2008.4588187
