Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO2 and HfSiON gate dielectrics

Author

Wei-Liang Lin ; Lee, Yao-Jen ; Lo, Wen-Cheng ; Chen, King-Sheng ; Hou, Y.T. ; Lin, K.C. ; Chao, Tien-Sheng

Author_Institution

Dept. of Electrophys., NCTU, Hsinchu

fYear

2008

fDate

7-11 July 2008

Firstpage

1

Lastpage

4

Abstract

PBTI degradation for HfO₂ and HfSiON NMOSFETs has been demonstrated. The generated oxide trap dominated the PBTI characteristics for Hf-based gate dielectrics. In addition, the reduction of DeltaV_TH and oxide trap generation under PBTI indicates that the HfSiON is better than HfO₂. On the other hand, the electron trapping/de-trapping effect has been investigated. As compared to HfO₂ dielectrics, the HfSiON has shallower charge trapping level due to elimination of deep dielectric vacancies, and the temperature effects are quite different between the HfSiON and HfO₂ gate dielectrics.

Keywords

MOSFET; dielectric materials; electron traps; hafnium compounds; silicon compounds; HfSiON; NMOSFETs; dynamic PBTI; electron trapping/detrapping effect; gate dielectrics; oxide trap; positive bias temperature instability; CMOS technology; Degradation; Dielectric devices; Electron traps; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Rapid thermal annealing; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the

Conference_Location

Singapore

Print_ISBN

978-1-4244-2039-1

Electronic_ISBN

978-1-4244-2040-7

Type

conf

DOI

10.1109/IPFA.2008.4588199

Filename

4588199