Title :
A 3.3V broadband linear power amplifier module for IEEE 802.16e (Wimax) applications using E-mode pHEMT technology
Author :
Chow, YH ; Yong, CK ; Lee, Joan ; Lee, HK ; Thor, WY ; Lee, KY ; Tan, HT ; Liew, YY ; Khoo, SH
Author_Institution :
WSD R&D, Penang
Abstract :
This paper describes, for the first time, the design and realization of a linear power amplifier for the newly-ratified IEEE 802.16e WMAN (WiMax) applications using a proprietary 0.25 um enhancement-mode pHEMT (EpHEMT) technology. When tested using a 10MHz bandwidth IEEE802.16e signal with 64-QAM modulation, the amplifier exhibits a linear power output of (22.5-23)dBm across the full (3.3-3.8)GHz band with less than 2.5% EVM on a single 3.3V supply while consuming 420 mA of total current. A 20 dB bypass gain attenuator that is activated by a CMOS-compatible voltage pin is included on-chip. Output power detection is achieved by the use of an on-chip power detector and a bias shutdown voltage shuts down the complete amplifier. At 3.6 V supply tuned to (3.3-3.6)GHz operation, the amplifier outputs 24 dBm of linear output power. The complete module is packaged in a molded chip-on-board (MCOB) 5 mm times 5 mm module.
Keywords :
CMOS integrated circuits; WiMax; attenuators; high electron mobility transistors; microwave power amplifiers; quadrature amplitude modulation; CMOS-compatible voltage pin; IEEE 802.16e; IEEE802.16e signal; QAM modulation; Wimax; bandwidth 10 MHz; broadband linear power amplifier; bypass gain attenuator; enhancement-mode pHEMT; frequency 3.3 GHz to 3.6 GHz; size 0.25 mum; voltage 3.3 V; voltage 3.6 V; Attenuators; Bandwidth; Broadband amplifiers; Gain; PHEMTs; Power amplifiers; Power generation; Testing; Voltage; WiMAX; Amplifier; Linearity; MMIC; Wimax; pHEMT;
Conference_Titel :
Microwave Conference, 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-001-9
DOI :
10.1109/EUMC.2007.4405411