A fully integrated fully differential low-noise amplifier for short range automotive radar using a SiGe:C BiCMOS technology

A fully integrated fully differential low-noise amplifier for 79 GHz short range radar applications using a highspeed SiGe:C BiCMOS technology is presented. The integrated circuit uses thin-film microstrip lines and exhibits compact design (530 x 690 mum²), low power consumption (90 mW at 3 V supply voltage), high gain (13 dB gain at 81 GHz), good linearity and reverse isolation. In order to ease the measurements of the circuit, a simple technique was used to measure single-ended the differential amplifier. To overcome possible inaccuracy of the line model, shorting bars are placed along these elements to allow easy correction and to avoid redesign.