The device characteristics of partially undoped poly-silicon gate P-LDMOS power transistors

Author

Su, R.Y. ; Chiang, P.Y. ; Gong, J. ; Tsai, J.L. ; Huang, T.Y. ; Liu, Mingo ; Chou, C.C.

Author_Institution

Dept. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu

fYear

2008

fDate

7-11 July 2008

Firstpage

1

Lastpage

4

Abstract

The effect of partially undoped poly-silicon gate above the drift region in P-lateral double-diffused MOS (P-LDMOS) Transistors is investigated. Experiment results show that it can improve the off-state leakage current and reduce the on-state resistance. For hot carrier performance, this structure induces a higher initial current shift due to less vertical field. The long-term hot carrier degradation behavior of this device is the same as that of the standard devices.

Keywords

electric resistance; leakage currents; power MOSFET; P-LDMOS power transistors; P-lateral double-diffused MOS transistors; hot carrier degradation behavior; hot carrier performance; off-state leakage current; on-state resistance; partially undoped polysilicon gate; Degradation; Electric breakdown; Hot carriers; Intrusion detection; Leakage current; MOSFETs; Measurement standards; Power engineering and energy; Power transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the

Conference_Location

Singapore

Print_ISBN

978-1-4244-2039-1

Electronic_ISBN

978-1-4244-2040-7

Type

conf

DOI

10.1109/IPFA.2008.4588212

Filename

4588212